Creating Nanowires to Improve Memory Storage in Everyday Devices

There is a demand for electronic devices such as phones, laptops, and computers to run faster and store more memory in a smaller space. However, conventional data storage technologies are nearly at their limits for optimization. Keeping up with the demands of a technology-driven world requires more research into novel methods of memory storage. Desired characteristics of new memory storage devices include low power consumption, high stacking density, fast switching speed, scalability, and simple fabrication. Nanowires made from metal and oxide layers show promise to achieve these characteristics in advanced electronics. Nanowires behave as one-dimensional structures with high surface-to-volume ratios, and often have different electrical and thermal properties than the same three-dimensional material. Metal-oxide nanowires have been shown to possess resistive switching characteristics, which can be used for non-volatile memory. This has implications for the future of data storage, as nonvolatile memory is retrievable even if there is an interruption in the power source. This research focuses on developing an inexpensive, scalable approach to fabricate cuprous oxide nanowires, as well as testing their electrical properties.